AFT18H357-24NR6 射频管 NXP

AFT18H357-24NR6

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 1805-1995 MHz, 63 W AVG., 28 V

This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz.

Features   AFT18H357-24NR6  

 Advanced high performance in--package Doherty

 High thermal conductivity packaging technology for reduced thermal resistance

 Greater negative gate--source voltage range for improved Class C operation

 Designed for digital predistortion error correction systems

1800 MHz   AFT18H357-24NR6

 Typical Doherty Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQA = 800 mA, VGSB = 0.9 V, Pout = 63 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

Maximum Ratings   AFT18H357-24NR6    

Rating Symbol Value Unit

Drain--Source Voltage VDSS –0.5, +65 Vdc

Gate--Source Voltage VGS –6.0, +10 Vdc

Operating Voltage VDD 32, +0 Vdc

Storage Temperature Range Tstg –65 to +150 C

Case Operating Temperature Range TC –40 to +150 C

Operating Junction Temperature Range (1,2) TJ –40 to +225 C