MRF8S18120HSR3 RF晶体管 NXP

MRF8S18120HSR3

RF Power Field Effect Transistors

N--Channel Enhancement--Mode Lateral MOSFETs

射频金属氧化物半导体场效应(RF MOSFET)晶体管 HV8 1.8GHZ 120W NI780HS

Designed for GSM and GSM EDGE base station applications with frequencies

from 1805 to 1880 MHz. Can be used in Class AB and Class C for all  MRF8S18120HSR3

typical cellular base station modulation formats.

Features  MRF8S18120HSR3

• Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters

• Internally Matched for Ease of Use

• Integrated ESD Protection

• Greater Negative Gate--Source Voltage Range for Improved Class C Operation

• Optimized for Doherty Applications

• RoHS Compliant

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

型号: MRF8S18120HSR3

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

RoHS:  详细信息  

晶体管极性: N-Channel 

Id-连续漏极电流: 800 mA 

Vds-漏源极击穿电压: - 500 mV, 65 V 

技术: Si 

增益: 18.2 dB 

输出功率: 72 W 

最小工作温度: - 40 C 

最大工作温度: + 150 C 

安装风格: SMD/SMT 

封装 / 箱体: NI-780 

封装: Cut Tape 

封装: MouseReel 

封装: Reel 

配置: Single  

工作频率: 1.805 GHz to 1.88 GHz  

系列: MRF8S18120H  

类型: RF Power MOSFET  

商标: NXP / Freescale  

通道数量: 1 Channel  

产品类型: RF MOSFET Transistors  

工厂包装数量: 250  

子类别: MOSFETs  

Vgs - 栅极-源极电压: 10 V  

Vgs th-栅源极阈值电压: 1.8 V  

单位重量: 4.763 g