MRFE6VP100HR5 射频管 NXP

MRFE6VP100HR5

RF Power LDMOS Transistors

High Ruggedness N--Channel

Enhancement--Mode Lateral MOSFETs

射频金属氧化物半导体场效应(RF MOSFET)晶体管 VHV6 100W 50V ISM

MRFE6VP100HR5  RF power transistors designed for both narrowband and broadband ISM,

broadcast and aerospace applications operating at frequencies from 1.8 to

2000 MHz. These devices are fabricated using Freescaleís enhanced

ruggedness platform and are suitable for use in applications where high VSWRs

are encountered.

Features  MRFE6VP100HR5

• Wide Operating Frequency Range

• Extremely Rugged

• Unmatched, Capable of Very Broadband Operation

• Integrated Stability Enhancements

• Low Thermal Resistance

• Integrated ESD Protection Circuitry

• In Tape and Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

型号: MRFE6VP100HR5

制造商: NXP 

产品种类: 射频金属氧化物半导体场效应(RF MOSFET)晶体管 

RoHS:  无铅环保  

晶体管极性: N-Channel 

Vds-漏源极击穿电压: 141 V 

技术: Si 

增益: 26 dB 

输出功率: 100 W 

最小工作温度: - 40 ℃ 

最大工作温度: + 150 ℃

安装风格: SMD/SMT 

封装 / 箱体: NI-780-4 

封装: Cut Tape 

封装: Reel 

配置: Single  

工作频率: 1800 MHz to 2000 MHz  

系列: MRFE6VP100H  

类型: RF Power MOSFET  

商标: NXP / Freescale  

产品类型: RF MOSFET Transistors  

工厂包装数量: 50  

子类别: MOSFETs  

Vgs - 栅极-源极电压: - 6 V, 10 V  

Vgs th-栅源极阈值电压: 2.1 V  

单位重量: 6.396 g