MRF1K50HR5 射频管 NXP

MRF1K50HR5

RF Power LDMOS Transistor High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET

射频金属氧化物半导体场效应(RF MOSFET)晶体管 Airfast RF Power LDMOS Transistor, 1500 W CW, 1.8-500 MHz, 50 V

This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 MHz.

Features MRF1K50HR5

• High drain--source avalanche energy absorption capability

• Unmatched input and output allowing wide frequency range utilization

• Device can be used single--ended or in a push--pull configuration

• Characterized from 30 to 50 V for ease of use

• Suitable for linear application

• Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation

• Recommended driver: MRFE6VS25N (25 W) MRF1K50HR5

• Lower thermal resistance part available: MRF1K50N

• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

型号: MRF1K50HR5 

制造商: NXP 

单位重量: 0.001 mg