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AFT05MS031NR1
射频金属氧化物半导体场效应(RF MOSFET)晶体管 MV9 UHF 13.6V
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
AFT05MS031NR1 Designed for mobile two--way radio applications with frequencies from
136 to 520 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
型号: AFT05MS031NR1
制造商: NXP
单位重量: 529.550 mg
Features AFT05MS031NR1
Characterized for Operation from 136 to 520 MHz
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Integrated ESD Protection
Integrated Stability Enhancements
Wideband — Full Power Across the Band:
136--174 MHz
380--450 MHz
450--520 MHz
225C Capable Plastic Package
AFT05MS031NR1
NXP(恩智浦)
TO-270-2
无铅环保型
贴片式
单件包装
超大功率
超高频
NPN型
33 W
- 40 ℃
150 ℃
294 W