无锡固电ISC 供应2N6535三极管

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DESCRIPTION        

·High DC Current Gain-

: hFE= 500(Min.)@IC= 3A

·Collector-Emitter Sustaining Voltage-

:VCEO(SUS)= 100V(Min.)

·LowCollector-Emitter Saturation Voltage-

: VCE(sat)= 3.0V(Max.)@IC= 3A

 

 

APPLICATIONS

·Power switching

·Hammer drivers

·Series and shunt regulators

·Audio amplifiers

 

 

Absolute maximum ratings (Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCER

Collector-Emitter Voltage RBE= 100Ω

100

V

VCEV

Collector-Emitter Voltage VBE= -1.5V

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

8

A

ICM

Collector Current-peak

15

A

IB

Base Current

250

mA

PC

Collector Power Dissipation

@TC=25

36

W

Tj

Junction Temperature

150

Tstg

StorageTemperature Range

-65~ 150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA; IB= 0

100

 

 

V

VCER(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA;RBE= 100Ω

100

 

 

V

VCEV(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA;VBE= -1.5V

100

 

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 3A; IB= 6mA

 

 

3.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 8A; IB= 80mA

 

 

3.0

V

VBE(on)-1

Base-Emitter On Voltage

IC= 3A; VCE= 3V

 

 

2.8

V

VBE(on)-2

Base-Emitter On Voltage

IC= 8A; VCE= 3V

 

 

4.5

V

ICEV

Collector Cutoff Current

VCE= 100V;VBE= -1.5V

VCE= 100V;VBE= -1.5V;TC= 125

 

 

0.5

5.0

mA

ICEO

Collector Cutoff Current

VCE= 100V; IB= 0

 

 

1.0

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

5

mA

hFE-1

DC Current Gain

IC= 3A; VCE= 3V

500

 

10000

 

hFE-2

DC Current Gain

IC= 8A; VCE= 3V

100

 

5000

 

COB

Output Capacitance

VCB= 10V; IE= 0; f= 1MHz

 

 

200

pF

 

"
是否提供加工定制

品牌/商标

ISC

型号/规格

2N6535

应用范围

功率

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装