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DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3856
APPLICATIONS
·For audio and general purpose applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -180 | V |
VCEO | Collector-Emitter Voltage | -180 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -15 | A |
IB | Base Current-Continuous | -4 | A |
PC | Collector Power Dissipation @ TC=25℃ | 130 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -50mA ; IB= 0 | -180 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -5.0A; IB= -0.5A |
|
| -2.0 | V |
ICBO | Collector Cutoff Current | VCB= -180V ; IE=0 |
|
| -100 | μA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC=0 |
|
| -100 | μA |
hFE | DC Current Gain | IC= -3A ; VCE= -4V | 50 |
| 180 |
|
COB | Output Capacitance | IE= 0 ; VCB= -10V;f= 1.0MHz |
| 500 |
| pF |
fT | Current-Gain—Bandwidth Product | IE= 0.5A ; VCE= -12V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= -10A ,RL= 4Ω, IB1= -IB2= -1A,VCC=-40V |
| 0.6 |
| μs |
tstg | Storage Time |
| 0.9 |
| μs | |
tf | Fall Time |
| 0.2 |
| μs |
是
isc
2SA1492
功率
硅(Si)
PNP型
-15(A)
130(W)
20(MHz)
平面型
直插型
塑料封装