无锡固电 ISC供应2N5497 三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

90

V

V_CEV

Collector-Emitter Voltage

V_BE= -1.5V                        

90

V

V_CER

Collector-Emitter Voltage

R_BE= 100Ω                        

80

V

V_CEO

Collector-Emitter Voltage                        

70

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

7

A

I_B

Base Current

3

A

P_C

Collector Power Dissipation

@ T_a=25℃

1.8

W

Collector Power Dissipation

@ T_C=25℃

50

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

2.5

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

70

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ;I_B= 0

70

V

V_CER(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ;R_BE= 100Ω

80

V

V_CEV(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ;V_BE= -1.5V

90

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 3.5A; I_B= 0.3.5A

1.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 3.5A ; V_CE= 4V

1.7

V

I_CEV

Collector Cutoff Current

V_CE= 85V;V_BE= -1.5V

V_CE= 85V;V_BE= -1.5V;T_C= 125℃

1.0

5.0

mA

I_CER

Collector Cutoff Current

V_CE= 70V;R_BE= 100Ω

V_CE= 70V;R_BE= 100Ω; T_C= 125℃

0.5

3.5

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 3.5A ; V_CE= 4V

20

100

f_T

Current-Gain—Bandwidth Product

I_C= 0.5A ; V_CE= 4V

0.8

MHz

Switching Times

t_on

Turn-On Time

I_C= 3.5A; I_B1= -I_B2= 0.35A

5

μs

t_off

Turn-Off Time

15

μs