无锡固电ISC供应三极管2SC5200

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

230

V

V_CEO

Collector-Emitter Voltage                        

230

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

15

A

I_B

Base Current-Continuous

1.5

A

P_C

Collector Power Dissipation

@ T_C=25℃

150

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA ; I_B= 0

230

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 8.0A; I_B= 0.8A

3.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= 7A ; V_CE= 5V

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 230V ; I_E= 0

5

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

5

μA

h_FE-1

DC Current Gain

I_C= 1A ; V_CE= 5V

55

160

h_FE-2

DC Current Gain

I_C= 7A ; V_CE= 5V

35

C_OB

Output Capacitance

I_E=0 ; V_CB= 10V;f= 1.0MHz

200

pF

f_T

Current-Gain—Bandwidth Product

I_C=1A ; V_CE= 5V

30

MHz

R55

R60

R65

R70

R75

R80

R85

R90

55-60

60-65

65-70

70-75

75-80

80-85

85-90

90-95

O95

O100

O105

O110

O115

O120

O125

95-100

100-105

105-110

110-115

115-120

120-125

125-130

O130

O135

O140

O145

O150

O155

130-135

135-140

140-145

145-150

150-155

155-160