无锡固电ISC供应2SA1249三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-180

V

V_CEO

Collector-Emitter Voltage                        

-160

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-1.5

A

I_CM

Collector Current-Peak

-2.5

A

P_C

Total Power Dissipation

@ T_a=25℃

1

W

Total Power Dissipation

@ T_C=25℃

10

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -1mA; R_BE=∞

-160

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                     

I_C= -10μA; I_E= 0

-180

V

V_(BR)EBO

Emitter-BaseBreakdownVoltage

I_E= -10μA; I_C= 0

-6

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -0.5A; I_B= -50mA

-0.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -0.5A; I_B= -50mA

-1.2

V

I_CBO

Collector Cutoff Current

V_CB= -120V; I_E= 0

-1.0

μA

I_EBO

Emitter Cutoff Current

V_EB= -4V; I_C= 0

-1.0

μA

h_FE-1

DC Current Gain

I_C= -0.1A; V_CE= -5V

100

400

h_FE-2

DC Current Gain

I_C= -10mA; V_CE= -5V

90

f_T

Current-Gain—Bandwidth Product

I_C= -50mA; V_CE= -10V

120

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f= 1.0MHz

22

pF

R

S

T

100-200

140-280

200-400