无锡固电ISC供应2N5804三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

300

V

V_CEO

Collector-Emitter Voltage

225

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

5

A

I_CM

Collector Current-Peak

10

A

P_C

Collector Power Dissipation@T_C=25℃

110

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.6

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ; I_B= 0

225

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

2.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

2.0

V

I_CEV

Collector Cutoff Current

V_CE= 300V; V_BE(off)= -1.5V

12

mA

I_CEO

Collector Cutoff Current

V_CE= 225V; I_B= 0

10

mA

I_EBO

Emitter Cutoff Current

V_EB= 7V; I_C= 0

1.0

mA

h_FE

DC Current Gain

I_C= 5A ; V_CE= 4V

10

100

f_T

Current Gain-Bandwidth Product

I_C= 1A ; V_CE= 10V

15

MHz