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DESCRIPTION
·DC Current Gain-
: hFE= 70-200@IC= -2.5A
·Wide Area of Safe Operation
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -80V(Min)
·Complement to Type 2N5610
APPLICATIONS
·Designed for use in high frequency power amplifiers, audio
power amplifier and drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -80 | V |
VEBO | Emitter-Base Voltage | -6 | V |
IC | Collector Current-Continuous | -5 | A |
PC | Collector Power Dissipation@TC=25℃ | 25 | W |
TJ | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 6.0 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= -50mA ; IB= 0 | -80 | V | |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -2.5A; IB= -0.25A |
| -0.75 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= -2.5A; IB= -0.25A |
| -1.45 | V |
ICEO | Collector Cutoff Current | VCE= -80V; IB= 0 |
| -1.0 | mA |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -6V; IC= 0 |
| -0.1 | mA |
hFE | DC Current Gain | IC= -2.5A ; VCE= -5V | 70 | 200 |
|
fT | Current-Gain—Bandwidth Product | IC= -0.5A ; VCE= -10V | 50 |
| MHz |
"
是
ISC
2N5609
功率
硅(Si)
PNP型
平面型
直插型
金属封装