无锡固电ISC供应晶体管2SC4466

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

120

V

V_CEO

Collector-Emitter Voltage                        

80

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

6

A

I_B

Base Current-Continuous

3

A

P_C

Collector Power Dissipation

@ T_C=25℃

60

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 50mA ; I_B= 0

80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2A; I_B= 0.2A

1.5

V

I_CBO

Collector Cutoff Current

V_CB= 120V ; I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

10

μA

h_FE

DC Current Gain

I_C= 2A ; V_CE= 4V

50

180

C_OB

Output Capacitance

I_E= 0 ; V_CB= 10V;f= 1.0MHz

110

pF

f_T

Current-Gain—Bandwidth Product

I_E= -0.5A ; V_CE= 12V

20

MHz

Switching Times

t_on

Turn-on Time

I_C= 3A ,R_L= 10Ω,

I_B1= -I_B2= 0.3A,V_CC=30V

0.16

μs

t_stg

Storage Time

2.6

μs

t_f

Fall Time

0.34

μs

O

P

Y

50-100

70-140

90-180