无锡固电ISC 供应三极管BU508AX

地区:江苏 无锡
认证:

无锡固电半导体股份有限公司

金牌会员9年

全部产品 进入商铺
DESCRIPTION                                             

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 700V (Min)

·High Switching Speed

 

APPLICATIONS

·Designed for use in horizontal deflection circuits of

color TV receivers.

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector- Emitter Voltage(VBE= 0)                        

1500

V

VCEO

Collector-Emitter Voltage                        

700

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current- Continuous

8

A

ICM

Collector Current-Peak

15

A

IB

Base Current- Continuous

4

A

IBM

Base Current-Peak

6

A

PC

Collector Power Dissipation

@ TC=25

45

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-65~150

 

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.8

/W

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; IB=0

700

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4.5A; IB= 1.6A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 4.5A; IB= 2.0A

 

 

1.1

V

ICES

Collector Cutoff Current

VCE= 1500V; VBE= 0

VCE= 1500V; VBE= 0; TC=125

 

 

1.0

2.0

mA

IEBO

Emitter Cutoff Current

VEB= 6V ; IC= 0

 

 

10

mA

hFE

DC Current Gain

IC= 0.1A ; VCE= 5V

6

 

30

 

COB

Output Capacitance

IE= 0; VCB= 10V; ftest= 0.1MHz

 

125

 

pF

fT

Current-Gain—Bandwidth Product

IC= 0.1A; VCE= 5V; ftest= 1.0MHz

 

7

 

MHz

Switching times

tstg

Storage Time

IC= 4.5A , IB(end)= 1.4A;

LB= 6μH; -VBB= -4V

 

6.5

 

μs

tf

Fall Time

 

0.7

 

μs

 

是否提供加工定制

品牌/商标

isc

型号/规格

BU508AX

应用范围

功率

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

TO-3PFa

封装材料

塑料封装