无锡固电ISC供应2SD2000晶体管,三极管,功率管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

80

V

V_CEO

Collector-Emitter Voltage                        

60

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

4

A

I_B

Base Current- Continuous

1

A

P_C

Collector Power Dissipation

@ T_a=25℃

2

W

Collector Power Dissipation

@ T_C=25℃

35

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 25mA; I_B= 0

60

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 0.4A

1.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= 4A; V_CE= 4V

2.0

V

I_CBO

Collector Cutoff Current

V_CB= 80V; I_E= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

100

μA

h_FE-1

DC Current Gain

I_C= 1A; V_CE= 4V

70

250

h_FE-2

DC Current Gain

I_C= 4A; V_CE= 4V

20

f_T

Current-Gain—Bandwidth Product

I_C= 0.2A; V_CE= 12V; f= 10MHz

80

MHz

Switching Times

t_on

Turn-on Time

V_CC=50V, I_C= 4A; I_B1= -I_B2= 0.4A

0.3

μs

t_stg

Storage Time

1.0

μs

t_f

Fall Time

0.2

μs

Q

P

70-150

120-250