无锡固电ISC供应2N5615三极管

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DESCRIPTION                                             

·DC Current Gain-

: hFE= 30-90@IC= -2.5A

·Wide Area of Safe Operation

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -80V(Min)

·Complement to Type 2N5616

 

 

APPLICATIONS

·Designed for use in high frequency power amplifiers, audio

power amplifier and drivers.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-100

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5.5

V

IC

Collector Current-Continuous

-5

A

PC

Collector Power Dissipation@TC=25

50

W

TJ

Junction Temperature

150

Tstg

Storage Temperature

-65~150

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.0

/W

 

ELECTRICAL CHARACTERISTICS

 

TC=25unless otherwise specified

 

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= -50mA ; IB= 0

-80

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

 

-1.5

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= -5A; IB= -0.5A

 

-2.2

V

ICEO

Collector Cutoff Current

VCE= -80V; IB= 0

 

-1.0

mA

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

 

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

 

-0.1

mA

hFE

DC Current Gain

IC= -2.5A ; VCE= -5V

30

90

 

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -10V

50

 

MHz

 

 

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2N5615

应用范围

功率

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

金属封装