无锡固电ISC供应2N5615三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-100

V

V_CEO

Collector-Emitter Voltage

-80

V

V_EBO

Emitter-Base Voltage

-5.5

V

I_C

Collector Current-Continuous

-5

A

P_C

Collector Power Dissipation@T_C=25℃

50

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

3.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -50mA ; I_B= 0

-80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-2.2

V

I_CEO

Collector Cutoff Current

V_CE= -80V; I_B= 0

-1.0

mA

I_CBO

Collector Cutoff Current

V_CB= -100V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.1

mA

h_FE

DC Current Gain

I_C= -2.5A ; V_CE= -5V

30

90

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A ; V_CE= -10V

50

MHz