无锡固电ISC 供应2N6122三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

60

V

V_CEO

Collector-Emitter Voltage                        

60

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

4

A

I_CM

Collector Current-Peak

8

A

I_B

Base Current

1

A

P_C

Collector Power Dissipation

@ T_C=25℃

40

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

3.125

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA; I_B=0

60

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 1.5A; I_B= 0.15A

0.6

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 4A; I_B= 1.0A

1.4

V

V_BE(on)

Base-Emitter On Voltage

I_C= 1.5A ; V_CE= 2V

1.2

V

I_CEX

Collector Cutoff Current

V_CE= 60V; V_BE(off)= 1.5V

V_CE= 60V; V_BE(off)= 1.5V ;T_C= 150℃

0.1

2.0

mA

I_CEO

Collector Cutoff Current

V_CE= 60V; I_B= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1.0

mA

h_FE-1

DC Current Gain

I_C= 1.5A ; V_CE= 2V

25

100

h_FE-2

DC Current Gain

I_C= 4A; V_CE= 2V

10

f_T

Current-Gain—Bandwidth Product

I_C= 1.0A;V_CE= 4V, f_test= 1.0MHz

2.5

MHz