无锡固电ISC 供应2SA1306三极管

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TO-220Fa供应2SA1306三极管,有意者请联系!

DESCRIPTION                                             

·Good Linearity of hFE

·High Collector-Emitter Breakdown Voltage-

  V(BR)CEO= -160V(Min)-2SA1306

= -180V(Min)-2SA1306A

= -200V(Min)-2SA1306B

·Complement to Type 2SC3298/A/B

 

APPLICATIONS

·Power amplifier applications.

·Driver stage amplifier applications.

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

2SA1306

-160

V

2SA1306A

-180

2SA1306B

-200

VCEO

Collector-Emitter Voltage                         

2SA1306

-160

V

2SA1306A

-180

2SA1306B

-200

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-1.5

A

IB

Base Current-Continuous

-0.15

A

PC

Collector Power Dissipation

@ TC=25

20

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage                         

2SA1306

IC= -10mA; IB= 0

-160

 

 

V

2SA1306A

-180

2SA1306B

-200

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -500mA; IB= -50mA

 

 

-1.5

V

VBE(on)

Base-Emitter On Voltage

IC= -500mA; VCE= -5V

 

 

-1.0

V

ICBO

Collector Cutoff Current

VCB= -160V; IE= 0

 

 

-1.0

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

 

 

-1.0

μA

hFE

DC Current Gain

IC= -100mA ; VCE= -5V

70

 

240

 

fT

Current-Gain—Bandwidth Product

IC= -100mA ; VCE= -10V

 

100

 

MHz

COB

Output Capacitance

IE= 0 ; VCB= -10V;ftest= 1.0MHz

 

30

 

pF

"
是否提供加工定制

品牌/商标

ISC

型号/规格

2SA1306

应用范围

功率

材料

硅(Si)

极性

PNP型

集电极允许电流ICM

-1.5(A)

集电极耗散功率PCM

20(W)

截止频率fT

100(MHz)

结构

平面型

封装形式

直插型

封装材料

塑料封装