无锡固电ISC供应2SD1210三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

150

V

V_CEO

Collector-Emitter Voltage

100

V

V_EBO

Emitter-Base Voltage

8

V

I_C

Collector Current-Continuous

10

A

I_CM

Collector Current-Peak

20

A

I_B

Base Current- Continuous

1

A

P_C

Collector Power Dissipation

@T_a=25℃

3

W

Collector Power Dissipation

@T_C=25℃

80

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 10A, I_B= 25mA

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 10A, I_B= 25mA

2.0

V

I_CBO

Collector Cutoff current

V_CB= 100V, I_E= 0

10

μA

I_EBO

Emitter Cutoff Current

V_EB= 8V; I_C= 0

5

mA

h_FE

DC Current Gain

I_C= 10A; V_CE= 2V

1000

Switching Times

t_on

Turn-On Time

I_C= 10A,I_B1= -I_B2= 25mA;

R_L= 5Ω;V_CC≈50V

1.0

μs

t_stg

Storage Time

5.0

μs

t_f

Fall Time

2.0

μs