无锡固电ISC 供应2N5970三极管

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DESCRIPTION                                             

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 80V(Min)

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 5A

·Excellent Safe Operating Area

 

 

APPLICATIONS

·Designed for use in high power audio amplifier applications

and high voltage switching regulator circuits.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

80

V

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

PC

Collector Power Dissipation @TC=25

150

W

TJ

Junction Temperature

200

Tstg

Storage Temperature

-65~200

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.17

/W

 

ELECTRICAL CHARACTERISTICS

 

TC=25unless otherwise specified

 

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ; IB= 0

80

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

 

1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 15A; IB= 3A

 

4.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 0.5A

 

1.8

V

ICEO

Collector Cutoff Current

VCE= 80V; IB= 0

 

1.0

mA

ICBO

Collector Cutoff Current

VCB= 80V; IE= 0

 

1.0

mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

1.0

mA

hFE-1

DC Current Gain

IC= 1.5A ; VCE= 4V

20

100

 

hFE-2

DC Current Gain

IC= 15A ; VCE= 4V

5

 

 

fT

Current Gain-Bandwidth Product

IC= 0.2A ; VCE= 10V

4

 

MHz

 

 

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2N5970

应用范围

功率

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装