无锡固电ISC 供应2N5970三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

80

V

V_CEO

Collector-Emitter Voltage

80

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

15

A

P_C

Collector Power Dissipation @T_C=25℃

150

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.17

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA ; I_B= 0

80

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 15A; I_B= 3A

4.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

1.8

V

I_CEO

Collector Cutoff Current

V_CE= 80V; I_B= 0

1.0

mA

I_CBO

Collector Cutoff Current

V_CB= 80V; I_E= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1.0

mA

h_FE-1

DC Current Gain

I_C= 1.5A ; V_CE= 4V

20

100

h_FE-2

DC Current Gain

I_C= 15A ; V_CE= 4V

5

f_T

Current Gain-Bandwidth Product

I_C= 0.2A ; V_CE= 10V

4

MHz