无锡固电ISC供应音响用三极管2SB778

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DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -120V(Min)

·Good Linearity of hFE

·Complement to Type 2SD998

 

 

APPLICATIONS

·High power amplifier applications

·Recommend for 45-50W audio frequency amplifier

output stage applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-120

V

VCEO

Collector-Emitter Voltage                        

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

Base Current-Continuous

-1

A

PC

Collector Power Dissipation

@ TC=25

80

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA ; IB= 0

-120

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -5.0A; IB= -0.5A

 

 

-2.5

V

VBE(on)

Base-Emitter On Voltage

IC= -5A ; VCE= -5V

 

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -120V ; IE=0

 

 

-10

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

 

 

-10

μA

hFE

DC Current Gain

IC= -1A ; VCE= -5V

55

 

160

 

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

 

280

 

pF

fT

Current-Gain—Bandwidth Product

IC=-1A ; VCE= -5V

 

10

 

MHz

 

u hFEClassifications

R

O

55-110

80-160

 

"
是否提供加工定制

品牌/商标

ISC

型号/规格

2SB778

应用范围

功率

材料

极性

PNP型

结构

平面型

封装形式

TO-3PML

封装材料

塑料封装