无锡固电ISC 供应2N6107三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-80

V

V_CEO

Collector-Emitter Voltage                        

-70

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-7

A

I_CM

Collector Current-Peak

-10

A

I_B

Base Current

-3

A

P_C

Collector Power Dissipation

@ T_C=25℃

40

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -100mA ;I_B= 0

-70

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -7A; I_B= -3A

-3.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= -7A ; V_CE= -4V

-3.0

V

I_CEX

Collector Cutoff Current

V_CE= -80V; V_BE(off)= -1.5V

V_CE= -70V; V_BE(off)= -1.5V; T_C= 150℃

-0.1

-2.0

mA

I_CEO

Collector Cutoff Current

V_CE= -60V;I_B= 0

-1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-1.0

mA

h_FE-1

DC Current Gain

I_C= -2A ; V_CE= -4V

30

150

h_FE-2

DC Current Gain

I_C= -7A ; V_CE= -4V

2.3

C_OB

Output Capacitance

I_E= 0 ; V_CB= -10V; f_test= 1MHz

250

pF

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A ; V_CE= -4V; f_test= 1MHz

10

MHz