无锡固电ISC 供应2SA1261三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-100

V

V_CEO

Collector-Emitter Voltage                        

-100

V

V_EBO

Emitter-Base Voltage

-7.0

V

I_C

Collector Current-Continuous

-10

A

I_CM

Collector Current-Peak

-20

A

I_B

Base Current-Continuous

-3.5

A

P_C

Collector Power Dissipation

@ T_a=25℃

1.5

W

Collector Power Dissipation

@ T_C=25℃

60

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -5.0A; I_B= -0.5A, L=1mH

-100

V

V_CEX(SUS)-1

Collector-Emitter Sustaining Voltage

I_C= -5.0A ; I_B1=-I_B2= -0.5A,

V_BE(OFF)=5.0V, L=180μH,clamped

-100

V

V_CEX(SUS)-2

Collector-Emitter Sustaining Voltage

I_C= -10A ; I_B1= -1.0A; I_B2= -0.5A,

V_BE(OFF)= 5.0V, L= 180μH,clamped

-100

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-0.6

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -5.0A; I_B= -0.5A

-1.5

V

I_CBO

Collector Cutoff Current

V_CB= -100V; I_E= 0

-10

μA

I_CER

Collector Cutoff Current

V_CE= -100V; R_BE= 51Ω,T_a=125℃

-1.0

mA

I_CEX

Collector Cutoff Current

V_CE= -100V; V_BE(off)= -1.5V

V_CE= -100V; V_BE(off)= -1.5V, T_a=125℃

-10

-1.0

μA

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-10

μA

h_FE-1

DC Current Gain

I_C= -0.5A; V_CE= -5V

40

200

h_FE-2

DC Current Gain

I_C= -3.0A; V_CE= -5V

40

200

h_FE-3

DC Current Gain

I_C= -5.0A; V_CE= -5V

20

Switching times

t_on

Turn-on Time

I_C= -5.0A, R_L= 10Ω,

I_B1= -I_B2= -0.5A, V_CC≈-50V

0.5

μs

t_stg

Storage Time

1.5

μs

t_f

Fall Time

0.5

μs

M

L

K

40-80

60-120

100-200