无锡固电ISC供应2N5429三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

100

V

V_CEO

Collector-Emitter Voltage

100

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

7

A

I_B

Base Current-Continuous

1

A

P_C

Collector Power Dissipation@T_C=25℃

40

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

4.37

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 50mA; I_B= 0

100

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 2A; I_B= 0.2A

0.7

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 7A; I_B= 0.7A

1.2

V

V_BE(sat)-1

Base-Emitter Saturation Voltage

I_C= 2A; I_B= 0.2A

1.2

V

V_BE(sat)-2

Base-Emitter Saturation Voltage

I_C= 7A; I_B= 0.7A

2.0

V

I_CBO

Collector Cutoff Current

V_CB= 100V; I_E= 0

0.1

mA

I_CEX

Collector Cutoff Current

V_CE= 90V; V_BE(off)= -1.5V

V_CE= 90V; V_BE(off)= -1.5V,T_C=150℃

0.1

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

0.1

mA

h_FE-1

DC Current Gain

I_C= 0.5A ; V_CE= 2V

30

h_FE-2

DC Current Gain

I_C= 2A; V_CE= 2V

30

120

h_FE-3

DC Current Gain

I_C= 5A; V_CE= 2V

20

f_T

Current Gain-Bandwidth Product

I_C= 0.5A; V_CE= 10V; f=10MHz

20

MHz