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DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·Good Linearity of hFE
·Complement to Type 2SB688
APPLICATIONS
·Audio frequency power amplifier applications
·Recommend for 45-50W audio frequency amplifier
output stage applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 120 | V |
VCEO | Collector-Emitter Voltage | 120 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 8 | A |
IB | Base Current-Continuous | 0.8 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 50mA ; IB= 0 | 120 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5.0A; IB= 0.5A |
|
| 2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= 5A ; VCE= 5V |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 120V ; IE= 0 |
|
| 10 | μA |
IEBO | Emitter Cutoff Current | VEB= 5V; IC= 0 |
|
| 10 | μA |
hFE | DC Current Gain | IC= 1A ; VCE= 5V | 55 |
| 160 |
|
COB | Output Capacitance | IE= 0; VCB= 10V;ftest= 1.0MHz |
| 170 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 5V;ftest= 1.0MHz |
| 12 |
| MHz |
u hFEClassifications
R | O |
55-110 | 80-160 |
是
isc/iscsemi
2SD718
功率
硅(Si)
NPN型
8(A)
80(W)
12(MHz)
平面型
TO-3PI
塑料封装