无锡固电ISC供应音响用大功率晶体管2SD718

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DESCRIPTION                                             

·Collector-Emitter Breakdown Voltage-

  : V(BR)CEO= 120V(Min)

·Good Linearity of hFE

·Complement to Type 2SB688

 

 

APPLICATIONS

·Audio frequency power amplifier applications

·Recommend for 45-50W audio frequency amplifier

  output stage applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

120

V

VCEO

Collector-Emitter Voltage                         

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

IB

Base Current-Continuous

0.8

A

PC

Collector Power Dissipation

@ TC=25

80

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 50mA ; IB= 0

120

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 5.0A; IB= 0.5A

 

 

2.5

V

VBE(on)

Base-Emitter On Voltage

IC= 5A ; VCE= 5V

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 120V ; IE= 0

 

 

10

μA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

 

 

10

μA

hFE

DC Current Gain

IC= 1A ; VCE= 5V

55

 

160

 

COB

Output Capacitance

IE= 0; VCB= 10V;ftest= 1.0MHz

 

170

 

pF

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V;ftest= 1.0MHz

 

12

 

MHz

 

u      hFEClassifications

R

O

55-110

80-160

是否提供加工定制

品牌/商标

isc/iscsemi

型号/规格

2SD718

应用范围

功率

材料

硅(Si)

极性

NPN型

集电极允许电流ICM

8(A)

集电极耗散功率PCM

80(W)

截止频率fT

12(MHz)

结构

平面型

封装形式

TO-3PI

封装材料

塑料封装