无锡固电ISC 供应2N6754三极管

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DESCRIPTION                                             

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 500(Min.)

·High Switching Speed

·Low Collector Saturation Voltage

·Wide Area of Safe Operation                                                      

 

 

APPLICATIONS

·Off-line power supplies

·High-voltage inverters

·Switching regulators

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV

Collector-Emitter Voltage

1000

V

VCEX(SUS)

Collector-Emitter Voltage

550

V

VCEO(SUS)

Collector-Emitter Voltage

500

V

VEBO

Emitter-Base Voltage

8

V

IC

Collector Current-Continuous

10

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

5

A

PC

Collector Power Dissipation@TC=25

150

W

TJ

Junction Temperature

175

Tstg

Storage Temperature

-65~200

 

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

/W

 

ELECTRICAL CHARACTERISTICS

 

TC=25unless otherwise specified

 

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 200mA; IB= 0

500

 

V

VCE(sat)-1

Collector-Emitter Saturation Voltage

IC= 5A; IB= 1A

 

1.0

V

VCE(sat)-2

Collector-Emitter Saturation Voltage

IC= 10A; IB= 3A

 

3.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 5A; IB= 1A

 

1.3

V

ICEV

Collector Cutoff Current

VCE= 1000V; VBE= -1.5V

VCE= 1000V; VBE= -1.5V; TC=100

 

0.1

1.0

mA

IEBO

Emitter Cutoff Current

VEB= 8V; IC= 0

 

2.0

mA

hFE

DC Current Gain

IC= 5A ; VCE= 3V

8

40

 

fT

Current Gain-Bandwidth Product

IC= 0.2A ; VCE= 10V

15

60

MHz

COB

Output Capacitance

IE= 0; VCB= 10V; f= 0.1MHz

50

250

pF

Switching times-Resistive Load

td

Delay Time

IC= 5A; IB1= -IB2= 1A; VCC= 250V;

VBE= -6V; tp= 20μs

 

0.1

μs

tr

Rise Time

 

0.4

μs

ts

Storage Time

 

3.0

μs

tf

Fall Time

 

0.4

μs

 

 

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2N6754

应用范围

功率

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装