无锡固电ISC供应2N5620三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

120

V

V_CEO

Collector-Emitter Voltage

100

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

5

A

P_C

Collector Power Dissipation@T_C=25℃

50

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

3.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 50mA ; I_B= 0

100

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 5A; I_B= 0.5A

2.2

V

I_CEO

Collector Cutoff Current

V_CE= 100V; I_B= 0

1.0

mA

I_CBO

Collector Cutoff Current

V_CB= 120V; I_E= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 2.5A ; V_CE= 5V

30

90

f_T

Current-Gain—Bandwidth Product

I_C= 0.5A ; V_CE= 10V

60

MHz