无锡固电ISC 供应BU608D三极管

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DESCRIPTION                                           

·High Voltage: VCEV= 400V(Min)

·Fast Switching Speed-

: tf= 0.5μs(Max)

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 6A

 

APPLICATIONS

·Designed for use in horizontal deflection output stages

of TV’s and CRT’s

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

400

V

VCEV

Collector-Emitter Voltage                          

400

V

VCEO

Collector-Emitter Voltage                        

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

10

A

IB

Base Current

4

A

PC

Collector Power Dissipation

@ TC=25

60

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-65~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

IC= 100mA ;IB= 0

200

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 6A; IB= 1.2A

 

 

1.5

V

hFE

DC Current Gain

IC= 2A; VCE= 5V;

 

15

 

 

ICEV

Collector Cutoff Current

VCE= 400V; VBE= -1.5V

 

 

15

mA

IEBO

Emitter Cutoff Current

VEB= 6V; IC= 0

 

 

400

mA

fT

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 10V, ftest= 1MHz

10

 

 

MHz

VECF

C-E Diode Forward Voltage

IF= 5A

 

 

1.5

V

tf

Fall Time

IC= 6A; IB1= -IB2= 1.2A, VCC= 40V

 

 

0.5

μs

 

"
是否提供加工定制

品牌/商标

ISC

型号/规格

BU608D

应用范围

功率

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

TO-3

封装材料

塑料封装