无锡固电ISC供应2N5738三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-100

V

V_CEO

Collector-Emitter Voltage

-100

V

V_EBO

Emitter-Base Voltage

-5

V

I_C

Collector Current-Continuous

-10

A

I_CM

Collector Current-Peak

-20

A

I_B

Base Current-Continuous

-4

A

P_C

Collector Power Dissipation

@T_C=100℃

50

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-a}

Thermal Resistance,Junction to Ambient

0.5

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= -200mA ; I_B= 0

-100

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-0.5

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= -10A; I_B= -2.5A

-3.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-1.2

V

V_BE(on)

Base-Emitter On Voltage

I_C= -4A; V_CE= -4V

-1.5

V

I_CEO

Collector Cutoff Current

V_CE= -100V; I_B= 0

-0.5

mA

I_CBO

Collector Cutoff Current

V_CB= -100V; I_E= 0

-0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.1

mA

h_FE-1

DC Current Gain

I_C= -5A; V_CE= -5V

20

80

h_FE-2

DC Current Gain

I_C= -10A; V_CE= -5V

4

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -10V

10

MHz