无锡固电ISC供应2SD1294三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

60±15

V

V_CEO

Collector-Emitter Voltage                        

60±15

V

V_EBO

Emitter-Base Voltage

6

V

I_C

Collector Current-Continuous

5

A

I_CM

Collector Current-Pulse

20

A

P_C

Collector Power Dissipation

@ T_C=25℃

80

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CBO

Collector-Base Breakdown Voltage                     

I_C= 100mA; I_E= 0

45

75

V

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 100mA; I_B= 0

45

75

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 0.5A; I_B= 1mA

1.5

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 1A; I_B= 1mA

2.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= 0.5A; V_CE= 5V

1.8

V

I_EBO

Emitter Cutoff Current

V_EB= 6V; I_C= 0

100

μA

h_FE

DC Current Gain

I_C= 0.5A; V_CE= 5V

2000

20000