无锡固电ISC供应三极管2N3740

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DESCRIPTION                                             

·DC Current Gain-

: hFE= 30-100@IC= -250mA

·Wide Area of Safe Operation

·Collector-Emitter Saturation Voltage-

: VCE(sat)= -0.6 V(Max)@ IC= -1A

 

APPLICATIONS

·Designed for use as drivers, switches and medium-power

amplifier and general purpose applications

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

2N3740

-60

V

2N3741

-80

VCEO

Collector-Emitter Voltage

2N3740

-60

V

2N3741

-80

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-4

A

ICM

Collector Current-Peak

-10

A

IB

Base Current

-2

A

PC

Collector Power Dissipation@TC=25

25

W

TJ

Junction Temperature

200

Tstg

Storage Temperature

-65~200

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCEO(SUS)

Collector-Emitter Sustaining Voltage

2N3740

IC= -100mA ; IB= 0

-60

 

V

2N3741

-80

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -1A; IB= -125mA

 

-0.6

V

VBE(on)

Base-Emitter On Voltage

IC= -250mA ; VCE= -1V

 

-1.0

V

ICEO

Collector Cutoff Current

2N3740

VCE= -40V; IB= 0

 

-1.0

mA

2N3741

VCE= -60V; IB= 0

-1.0

ICEX

Collector Cutoff Current

2N3740

VCE= -60V; VBE(off)= -1.5V

VCE= -40V; VBE(off)= -1.5V,TC=150

 

-0.1

-1.0

mA

2N3741

VCE= -80V; VBE(off)= -1.5V

VCE= -60V; VBE(off)= -1.5V,TC=150

-0.1

-1.0

ICBO

Collector Cutoff Current

2N3740

VCB= -60V; IE= 0

 

-0.1

mA

2N3741

VCB= -80V; IE= 0

-0.1

IEBO

Emitter Cutoff Current

VEB= -7V; IC=0

 

-0.5

mA

hFE-1

DC Current Gain

IC= -100mA ; VCE= -1V

40

 

 

hFE-2

DC Current Gain

IC= -250mA ; VCE= -1V

30

100

 

hFE-3

DC Current Gain

IC= -500mA ; VCE= -1V

20

 

 

hFE-4

DC Current Gain

IC= -1A ; VCE= -1V

10

 

 

COB

Output Capacitance

IE= 0 ; VCB= -10V;ftest= 0.1MHz

 

100

pF

fT

Current-Gain—Bandwidth Product

IC=-0.1A ; VCE= -10V ;ftest= 1.0MHz

3

 

MHz

 

"
是否提供加工定制

品牌/商标

ISC

型号/规格

2N3740

应用范围

功率

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

金属封装