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DESCRIPTION
·DC Current Gain-
: hFE= 20(Min)@IC=-10A
·Low Saturation Voltage-
: VCE(sat)=-1.0V(Max)@ IC=-15A
·Complement to Type 2N5885/5886
APPLICATIONS
·Designed for general purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL | PARAMETER | VALUE | UNIT | |
VCBO | Collector-Base Voltage | 2N5883 | -60 | V |
2N5884 | -80 | |||
VCEO | Collector-Emitter Voltage | 2N5883 | -60 | V |
2N5884 | -80 | |||
VEBO | Emitter-Base Voltage | -5 | V | |
IC | Collector Current-Continuous | -25 | A | |
ICM | Collector Current-Peak | -50 | A | |
IB | Base Current-Continuous | -7.5 | A | |
PC | Collector Power Dissipation @TC=25℃ | 200 | W | |
TJ | Junction Temperature | 200 | ℃ | |
Tstg | Storage Temperature | -65~200 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 0.875 | ℃/W |
是
isc
2N5883
功率
硅(Si)
PNP型
平面型
直插型
金属封装