无锡固电ISC供应2N3791晶体管,三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

2N3791

-60

V

2N3792

-80

V_CEO

Collector-Emitter Voltage

2N3791

-60

V

2N3792

-80

V_EBO

Emitter-Base Voltage

-7

V

I_C

Collector Current-Continuous

-10

A

I_B

Base Current

-4

A

P_C

Collector Power Dissipation@T_C=25℃

150

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

2N3791

I_C= -200mA ; I_B= 0

-60

V

2N3792

-80

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -5A; I_B= -0.5A

-1.0

V

V_BE(on)-1

Base-Emitter On Voltage

I_C= -5A ; V_CE= -2V

-1.8

V_BE(on)-2

Base-Emitter On Voltage

I_C= -10A ; V_CE= -4V

-4.0

V

I_CEX

Collector Cutoff Current

2N3791

V_CE= -60V; V_BE(off)= -1.5V

V_CE= -60V; V_BE(off)= -1.5V,T_C=150℃

-1.0

-5.0

mA

2N3792

V_CE= -80V; V_BE(off)= -1.5V

V_CE= -80V; V_BE(off)= -1.5V,T_C=150℃

-1.0

-5.0

I_EBO

Emitter Cutoff Current

V_EB= -7V; I_C=0

-5.0

mA

h_FE-1

DC Current Gain

I_C= -1A ; V_CE= -2V

50

180

h_FE-2

DC Current Gain

I_C= -3A ; V_CE= -2V

30

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A ; V_CE= -10V ;f_test= 1.0MHz

4

MHz