2N5931三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

170

V

V_CEO

Collector-Emitter Voltage

160

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

30

A

I_B

Base Current-Continuous

7.5

A

P_C

Collector Power Dissipation @T_C=25℃

175

W

T_J

Junction Temperature

200

℃

T_stg

Storage Temperature

-65~200

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

0.875

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 200mA ; I_B= 0

160

V

V_CE(sat)-1

Collector-Emitter Saturation Voltage

I_C= 15A; I_B= 1.5A

1.0

V

V_CE(sat)-2

Collector-Emitter Saturation Voltage

I_C= 30A; I_B= 7.5A

4.0

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 30A; I_B= 7.5A

2.5

V

V_BE(on)

Base-Emitter On Voltage

I_C= 10A ; V_CE= 4V

1.5

V

I_CEO

Collector Cutoff Current

V_CE= 160V; I_B= 0

2.0

mA

I_CBO

Collector Cutoff Current

V_CB= 170V; I_E= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1.0

mA

h_FE-1

DC Current Gain

I_C= 10A ; V_CE= 4V

20

100

h_FE-2

DC Current Gain

I_C= 30A ; V_CE= 4V

4

f_T

Current-Gain—Bandwidth Product

I_C= 1A ; V_CE= 10V ;f_test= 1MHz

30

MHz