无锡固电ISC供应2SA1184三极管

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                     

-120

V

V_CEO

Collector-Emitter Voltage                        

-120

V

V_EBO

Emitter-Base Voltage

-5.0

V

I_C

Collector Current-Continuous

-1

A

I_B

Base Current-Continuous

-0.1

A

P_C

Collector Power Dissipation

@ T_a=25℃

1

W

Total Power Dissipation

@ T_C=25℃

15

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage                        

I_C= -10mA; I_B= 0

-120

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -1mA; I_C= 0

-5

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -500mA; I_B= -50mA

-1.0

V

V_BE(on)

Base-Emitter On Voltage

I_C= -500mA; V_CE= -5V

-1.0

V

I_CBO

Collector Cutoff Current

V_CB= -120V; I_E= 0

-0.1

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-0.1

μA

h_FE

DC Current Gain

I_C= -100mA; V_CE= -5V

80

240

f_T

Current-Gain—Bandwidth Product

I_C= -100mA; V_CE= -5V

120

MHz

C_OB

Output Capacitance

I_E= 0; V_CB= -10V; f= 1.0MHz

30

pF

O

Y

80-160

120-240