无锡固电ISC 供应晶体管,三极管,功率管BD441

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                      

80

V

V_CES

Collector-Emitter Voltage                         

80

V

V_CEO

Collector-Emitter Voltage                         

80

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

4

A

I_CM

Collector Current-Pulse

7

A

I_B

Base Current-Continuous

1

A

P_C

Collector Power Dissipation

@ T_C=25℃

36

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-65~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 100mA; I_B= 0

80

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 2A; I_B= 0.2A

0.8

V

V_BE(on)-1

Base-Emitter On Voltage

I_C= 10mA; V_CE= 5V

0.58

V

V_BE(on)-2

Base-Emitter On Voltage

I_C= 2A; V_CE= 1V

1.5

V

I_CBO

Collector Cutoff Current

V_CB=80V; I_E= 0

100

μA

I_CEO

Collector Cutoff Current

V_CE=80V; V_BE= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

1

mA

h_FE-1

DC Current Gain

I_C= 10mA; V_CE= 5V

15

h_FE-2

DC Current Gain

I_C= 0.5A; V_CE= 1V

40

h_FE-3

DC Current Gain

I_C= 2A; V_CE= 1V

15

f_T

Current-Gain—Bandwidth Product

I_C= 0.25A; V_CE= 1V

3

MHz