图文详情
产品属性
相关推荐
·Low Collector Saturation Voltage-
: VCE(sat)= -2.0V(Max)@IC= -3A
·Wide Area of Safe Operation
·Complement to Type 2SD1485
APPLICATIONS
·Designed for high power amplification.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-Emitter Voltage | -100 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -5 | A |
ICM | Collector Current-Peak | -8 | A |
PC | Collector Power Dissipation @ Ta=25℃ | 3 | W |
Collector Power Dissipation @ TC=25℃ | 60 | ||
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -2.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -3A; VCE= -5V |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -100V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -20mA; VCE= -5V | 20 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A; VCE= -5V | 60 |
| 200 |
|
hFE-3 | DC Current Gain | IC= -3A; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE= 0; VCE= -10V; ftest=1MHz |
| 170 |
| pF |
fT | Current-Gain—Bandwidth Product | IC=-0.5A; VCE= -5V;ftest=1MHz |
| 20 |
| MHz |
u hFE-2Classifications
Q | P |
60-120 | 100-200 |
是
ISC
2SB1054
放大
硅(Si)
PNP型
平面型
直插型
塑料封装