无锡固电ISC 供应2SB1054三极管

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DESCRIPTION                                             

·Low Collector Saturation Voltage-

: VCE(sat)= -2.0V(Max)@IC= -3A

·Wide Area of Safe Operation

·Complement to Type 2SD1485

 

 

APPLICATIONS

·Designed for high power amplification.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

-100

V

VCEO

Collector-Emitter Voltage                        

-100

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-8

A

PC

Collector Power Dissipation

@ Ta=25

3

W

Collector Power Dissipation

@ TC=25

60

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.3A

 

 

-2.0

V

VBE(on)

Base-Emitter On Voltage

IC= -3A; VCE= -5V

 

 

-1.8

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0

 

 

-50

μA

IEBO

Emitter Cutoff Current

VEB= -3V; IC= 0

 

 

-50

μA

hFE-1

DC Current Gain

IC= -20mA; VCE= -5V

20

 

 

 

hFE-2

DC Current Gain

IC= -1A; VCE= -5V

60

 

200

 

hFE-3

DC Current Gain

IC= -3A; VCE= -5V

20

 

 

 

COB

Output Capacitance

IE= 0; VCE= -10V; ftest=1MHz

 

170

 

pF

fT

Current-Gain—Bandwidth Product

IC=-0.5A; VCE= -5V;ftest=1MHz

 

20

 

MHz

 

u hFE-2Classifications

Q

P

60-120

100-200

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2SB1054

应用范围

放大

材料

硅(Si)

极性

PNP型

结构

平面型

封装形式

直插型

封装材料

塑料封装