无锡固电ISC 供应三极管BU932RP

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

500

V

V_CEO

Collector-Emitter Voltage

450

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current

15

A

I_CM

Collector Current-peak

30

A

I_B

Base Current

1

A

I_BM

Base Current-peak

5

A

P_C

Collector Power Dissipation

@T_C=25℃

125

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-40~150

℃

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance, Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_CEO(SUS)

Collector-Emitter Sustaining Voltage

I_C= 0.1A; I_B= 0; L= 10mH

450

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 8 A; I_B= 150mA

1.8

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 8 A; I_B= 150mA

2.2

V

I_CES

Collector Cutoff Current

V_CE= 500V;V_BE= 0

V_CE= 500V;V_BE= 0;T_j= 125℃

1.0

5.0

mA

I_CEO

Collector Cutoff Current

V_CE= 450V;I_B= 0

1.0

mA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

50

mA

h_FE

DC Current Gain

I_C= 5A; V_CE= 10V

300

V_ECF

C-E Diode Forward Voltage

I_F= 10A

2.8

V