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产品属性
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·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V(Min)
·Fast Switching speed
APPLICATIONS
·Designed for power switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 600 | V |
VCEO | Collector-Emitter Voltage | 450 | V |
VCEX | Collector-Emitter Voltage VEB= 5V | 600 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 10 | A |
ICM | Collector Current-Peak | 20 | A |
IB | Base Current-Continuous | 4 | A |
IBM | Base Current-Peak | 8 | A |
PT | Total Power Dissipation @ TC=25℃ | 65 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
THERMAL CHARACTERISTICS
SYMBOL | PARAMETER | MAX | UNIT |
Rth j-c | Thermal Resistance,Junction to Case | 1.92 | ℃/W |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCEO(SUS) | Collector-Emitter Sustaining Voltage | IC= 0.2A; IB= 0 | 450 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 5A; IB= 1A |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 5A; IB= 1A |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
ICEO | Collector Cutoff Current | At rated Voltage |
|
| 100 | μA |
IEBO | Emitter Cutoff Current | At rated Voltage |
|
| 100 | μA |
hFE-1 | DC Current Gain | IC= 5A; VCE= 5V | 10 |
|
|
|
hFE-2 | DC Current Gain | IC= 1mA; VCE= 5V | 5 |
|
|
|
fT | Current-Gain—Bandwidth Product | IC= 1A; VCE= 10V |
| 20 |
| MHz |
Switching times | ||||||
ton | Turn-on Time | IC= 5A, IB1= 1A; IB2= -2A; RL= 30Ω; VBB2= 4V |
|
| 0.5 | μs |
tstg | Storage Time |
|
| 2.0 | μs | |
tf | Fall Time |
|
| 0.2 | μs |
是
ISC
2SC4581
放大
硅(Si)
NPN型
平面型
直插型
塑料封装