无锡固电ISC 供应2SA1943晶体管

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DESCRIPTION                                             

·High Current Capability

·High Power Dissipation

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -230V(Min)

·Complement to Type 2SC5200

 

APPLICATIONS

·Power amplifier applications

·Recommend for 100W high fidelity audio frequency amplifier

  output stage applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                      

-230

V

VCEO

Collector-Emitter Voltage                         

-230

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

-1.5

A

PC

Collector Power Dissipation

@ TC=25

150

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -50mA ; IB= 0

-230

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -8.0A; IB= -0.8A

 

 

-3.0

V

VBE(on)

Base-Emitter On Voltage

IC= -7A ; VCE= -5V

 

 

-1.5

V

ICBO

Collector Cutoff Current

VCB= -230V ; IE= 0

 

 

-5

μA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

 

 

-5

μA

hFE-1

DC Current Gain

IC= -1A ; VCE= -5V

55

 

160

 

hFE-2

DC Current Gain

IC= -7A ; VCE= -5V

35

 

 

 

COB

Output Capacitance

IE=0 ; VCB= -10V;f= 1.0MHz

 

360

 

pF

fT

Current-Gain—Bandwidth Product

IC=-1A ; VCE= -5V

 

30

 

MHz

 

u      hFE-1Classifications

R:55-95

R55

R60

R65

R70

R75

R80

R85

R90

55-60

60-65

65-70

70-75

75-80

80-85

85-90

90-95

O:95-160

O95

O100

O105

O110

O115

O120

O125

95-100

100-105

105-110

110-115

115-120

120-125

125-130

 

O130

O135

O140

O145

O150

O155

130-135

135-140

140-145

145-150

150-155

155-160

是否提供加工定制

品牌/商标

iscsemi/isc

型号/规格

2SA1943

应用范围

放大

材料

硅(Si)

极性

PNP型

集电极允许电流ICM

-15(A)

集电极耗散功率PCM

150(W)

截止频率fT

30(MHz)

结构

平面型

封装形式

TO-3PL