无锡固电ISC 供应2SB1163三极管
地区：江苏 无锡
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DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -180V(Min)
·Good Linearity of hFE
·Wide Area of Safe Operation
·Complement to Type 2SD1718
APPLICATIONS
·Designed for high power amplifier applications
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= -10A; IB= -1A |
|
| -2.5 | V |
VBE(on) | Base-Emitter On Voltage | IC= -8A; VCE= -5V |
|
| -1.8 | V |
ICBO | Collector Cutoff Current | VCB= -180V; IE= 0 |
|
| -50 | μA |
IEBO | Emitter Cutoff Current | VEB= -3V; IC= 0 |
|
| -50 | μA |
hFE-1 | DC Current Gain | IC= -20mA; VCE= -5V | 20 |
|
|
|
hFE-2 | DC Current Gain | IC= -1A; VCE= -5V | 60 |
| 200 |
|
hFE-3 | DC Current Gain | IC= -8A; VCE= -5V | 20 |
|
|
|
COB | Output Capacitance | IE= 0; VCB= -10V; ftest= 1.0MHz |
| 230 |
| pF |
fT | Current-Gain—Bandwidth Product | IC= -0.5A; VCE= -5V |
| 20 |
| MHz |
u hFE-2Classifications
Q | S | P |
60-120 | 80-160 | 100-200 |
是
ISC/ISCSEMI
2SB1163
放大
硅(Si)
PNP型
15（A）
150（W）
20（MHz）
面接触型
TO-3PL
玻璃封装
