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·High Power Dissipation-
: PC= 100W(Max.)@TC=25℃
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS
·Designed for power and switching applications.
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | -130 | V |
VCEO | Collector-Emitter Voltage | -130 | V |
VEBO | Emitter-Base Voltage | -5 | V |
IC | Collector Current-Continuous | -7 | A |
PC | Collector Power Dissipation @TC=25℃ | 100 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | Storage Temperature | -65~200 | ℃ |
ELECTRICAL CHARACTERISTICS
Tj=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= -30mA; IB= 0 | -130 |
|
| V |
VCE(sat)-1 | Collector-Emitter Saturation Voltage | IC= -3A; IB= -0.3A |
|
| -1.0 | V |
VCE(sat)-2 | Collector-Emitter Saturation Voltage | IC= -7A; IB= -1.5A |
|
| -3.0 | V |
VBE(on) | Base-Emitter On Voltage | IC= -3A; VCE= -4V |
|
| -1.6 | V |
ICBO | Collector Cutoff Current | VCB= -130V; IE= 0 |
|
| -0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= -5V; IC= 0 |
|
| -0.1 | mA |
hFE-1 | DC Current Gain | IC= -1A; VCE= -4V | 40 |
|
|
|
hFE-2 | DC Current Gain | IC= -3A; VCE= -4V | 20 |
|
|
|
是
ISC
2SA882
放大
硅(Si)
PNP型
平面型
直插型
金属封装