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产品属性
相关推荐
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min.)
·High Switching Speed
APPLICATIONS
·High voltage switching applications
·Switching regulator applications
·High speed DC-DC converter applications
SYMBOL | PARAMETER | VALUE | UNIT |
VCBO | Collector-Base Voltage | 850 | V |
VCEO | Collector-Emitter Voltage | 800 | V |
VEBO | Emitter-Base Voltage | 7 | V |
IC | Collector Current-Continuous | 2 | A |
ICM | Collector Current-Peak | 4 | A |
IB | Base Current-Continuous | 1 | A |
PC | Collector Power Dissipation @ TC=25℃ | 80 | W |
TJ | JunctionTemperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
ELECTRICAL CHARACTERISTICS
TC=25℃unless otherwise specified
SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
V(BR)CEO | Collector-Emitter Breakdown Voltage | IC= 10mA; IB= 0 | 800 |
|
| V |
V(BR)CBO | Collector-BaseBreakdownVoltage | IC= 1mA; IE= 0 | 850 |
|
| V |
VCE(sat) | Collector-Emitter Saturation Voltage | IC= 0.5A; IB= 50mA |
|
| 1.0 | V |
VBE(sat) | Base-Emitter Saturation Voltage | IC= 0.5A; IB= 50mA |
|
| 1.5 | V |
ICBO | Collector Cutoff Current | VCB= 800V; IE= 0 |
|
| 0.1 | mA |
IEBO | Emitter Cutoff Current | VEB= 7V; IC= 0 |
|
| 1.0 | mA |
hFE | DC Current Gain | IC= 0.5A; VCE= 5V | 10 |
|
|
|
Switching times | ||||||
tr | Rise Time | IB1= 50mA; IB2= -0.1A RL= 800Ω; VCC≈400V PW=20μs; Duty≤1% |
|
| 1.0 | μs |
tstg | Storage Time |
|
| 4.0 | μs | |
tf | Fall Time |
|
| 1.0 | μs |
是
ISC
2SC2792
放大
硅(Si)
NPN型
平面型
直插型
金属封装