无锡固电ISC 供应2SC2792三极管

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DESCRIPTION                                             

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 800V(Min.)

·High Switching Speed

 

 

APPLICATIONS

·High voltage switching applications

·Switching regulator applications

·High speed DC-DC converter applications

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

850

V

VCEO

Collector-Emitter Voltage                        

800

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

2

A

ICM

Collector Current-Peak

4

A

IB

Base Current-Continuous

1

A

PC

Collector Power Dissipation

@ TC=25

80

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 10mA; IB= 0

800

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage                     

IC= 1mA; IE= 0

850

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 0.5A; IB= 50mA

 

 

1.0

V

VBE(sat)

Base-Emitter Saturation Voltage

IC= 0.5A; IB= 50mA

 

 

1.5

V

ICBO

Collector Cutoff Current

VCB= 800V; IE= 0

 

 

0.1

mA

IEBO

Emitter Cutoff Current

VEB= 7V; IC= 0

 

 

1.0

mA

hFE

DC Current Gain

IC= 0.5A; VCE= 5V

10

 

 

 

Switching times

tr

Rise Time

IB1= 50mA; IB2= -0.1A

RL= 800Ω; VCC400V

PW=20μs; Duty1%

 

 

1.0

μs

tstg

Storage Time

 

 

4.0

μs

tf

Fall Time

 

 

1.0

μs

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2SC2792

应用范围

放大

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

金属封装