无锡固电ISC供应三极管2SD1049

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

120

V

V_CEO

Collector-Emitter Voltage

80

V

V_EBO

Emitter-Base Voltage

7

V

I_C

Collector Current-Continuous

25

A

I_B

Base Current-Continuous

5

A

P_C

Collector Power Dissipation

@T_C=25℃

80

W

T_j

Junction Temperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 10mA; I_B= 0

80

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= 0.1mA; I_E= 0

120

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= 0.1mA; I_C= 0

7

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 25A; I_B= 2.5A

1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 25A; I_B= 2.5A

2.0

V

I_CBO

Collector Cutoff Current

V_CB= 120V; I_E= 0

0.1

mA

I_EBO

Emitter Cutoff Current

V_EB= 7V; I_C= 0

0.1

mA

h_FE

DC Current Gain

I_C= 25A; V_CE= 5V

20

Switching times Resistive Load

t_on

Turn-on Time

I_C= 25A; I_B1= -I_B2= 2.5A;

R_L= 3Ω, P_W= 20μs;

Duty≤2%

1.0

μs

t_s

Storage Time

2.5

μs

t_f

Fall Time

0.4

μs

SYMBOL

PARAMETER

MAX

UNIT

R_{th j-c}

Thermal Resistance,Junction to Case

1.55

℃/W