无锡固电ISC 供应三极管2SB551

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-50

V

V_CEO

Collector-Emitter Voltage

-50

V

V_EBO

Emitter-Base Voltage

-4

V

I_C

Collector Current-Continuous

-3

A

P_C

Collector Power Dissipation

@T_C= 25℃

25

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-45~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA; R_BE=∞

-50

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= -5mA; I_E= 0

-50

V

V_(BR)EBO

Emitter-Base Breakdown Voltage

I_E= -5mA; I_C= 0

-4

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -2A; I_B= -0.2A

1.2

V

V_BE(on)

Base-Emitter On Voltage

I_C= -1A; V_CE= -4V

1.5

V

I_CBO

Collector Cutoff Current

V_CB= -20V; I_E= 0

-0.1

mA

h_FE-1

DC Current Gain

I_C= -1A; V_CE= -4V

35

200

h_FE-2

DC Current Gain

I_C= -0.1A; V_CE= -4V

35

f_T

Current-Gain—Bandwidth Product

I_C= -0.5A; V_CE= -4V

15

MHz

A

B

C

35-70

60-120

100-200