无锡固电ISC 供应三极管2SA652

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage

-150

V

V_CEO

Collector-Emitter Voltage

-100

V

V_EBO

Emitter-Base Voltage

-6

V

I_C

Collector Current-Continuous

-1.0

A

P_C

Collector Power Dissipation@T_C=25℃

15

W

T_J

Junction Temperature

150

℃

T_stg

Storage Temperature

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= -50mA ; I_B= 0

-100

V

V_(BR)CBO

Collector-Base Breakdown Voltage

I_C= -1mA; I_E= 0

-150

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= -0.5A; I_B= -50mA

-1.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= -0.5A; I_B= -50mA

-2.0

V

I_CBO

Collector Cutoff Current

V_CB= -150V; I_E= 0

-10

μA

I_EBO

Emitter Cutoff Current

V_EB= -5V; I_C= 0

-10

μA

h_FE

DC Current Gain

I_C= -0.2A; V_CE= -5V

40

200

f_T

Current-Gain—Bandwidth Product

I_C= -0.1A; V_CE= -10V

15

MHz