无锡固电ISC供应三极管2SD1063

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DESCRIPTION                                             

·Low Collector Saturation Voltage

: VCE(sat)= 0.4V(Max)@ IC= 4A

·Wide Area of Safe Operation

·Complement to Type 2SB827

 

 

APPLICATIONS

·Designed for universal high current switching as solenoid

driving, high speed inverter and converter applications.

 

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage                     

60

V

VCEO

Collector-Emitter Voltage                        

50

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICP

Collector Current-Pulse

14

A

PC

Collector Power Dissipation

@ TC=25

60

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-55~150

 

ELECTRICAL CHARACTERISTICS

TC=25unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 1mA ; RBE=

50

 

 

V

V(BR)CBO

Collector-BaseBreakdownVoltage                     

IC= 1mA ; IE= 0

60

 

 

V

V(BR)EBO

Emitter-BaseBreakdownVoltage

IE= 1mA ; IC= 0

6

 

 

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.4A

 

 

0.4

V

ICBO

Collector Cutoff Current

VCB= 40V; IE= 0

 

 

100

μA

IEBO

Emitter Cutoff Current

VEB= 4V; IC=0

 

 

100

μA

hFE-1

DC Current Gain

IC= 1A; VCE= 2V

70

 

280

 

hFE-2

DC Current Gain

IC= 5A; VCE= 2V

30

 

 

 

fT

Current-Gain—Bandwidth Product

IC= 1A; VCE= 5V

 

10

 

MHz

Switching times

ton

Turn-on Time

IC= 2A; IB1= -IB2= 0.2A

RL= 10Ω;PW=20μs; VCC= 20V

 

0.2

 

μs

tstg

Storage Time

 

0.9

 

μs

tf

Fall Time

 

0.3

 

μs

          

 

u hFE-1Classifications

Q

R

S

70-140

100-200

140-280

 

是否提供加工定制

品牌/商标

ISC

型号/规格

2SD1063

应用范围

放大

材料

硅(Si)

极性

NPN型

结构

平面型

封装形式

直插型

封装材料

塑料封装