无锡固电ISC供应MJE4343三极管,品牌iscsemi

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iscSilicon NPN Power Transistors

DESCRIPTION                                             

·Collector-Emitter Sustaining Voltage-

 : VCEO(SUS)= 100V(Min)- MJE4340

           = 120V(Min)- MJE4341

= 140V(Min)- MJE4342

= 160V(Min)- MJE4343

·Low Saturation Voltage

·Complement to Type MJE4350/4351/4352/4353

 

APPLICATIONS

·Designed for use in high power audio amplifier applications

and high voltage switching regulator circuits.

 

ABSOLUTE MAXIMUM RATINGS(Ta=25)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector- Base

Voltage 

MJE4340

100

V

MJE4341

120

MJE4342

140

MJE4343

160

VCEO

Collector-Emitter

Voltage

MJE4340

100

V

MJE4341

120

MJE4342

140

MJE4343

160

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

16

A

ICM

Collector Current-Peak  

20

A

IB

Base Current-Continuous 

5

A

PC

Collector Power Dissipation

@ TC=25

125

W

TJ

JunctionTemperature

150

Tstg

StorageTemperature Range

-65~150

是否提供加工定制

品牌/商标

iscsemi

型号/规格

MJE4343

应用范围

放大

材料

硅(Si)

极性

NPN型

击穿电压VCBO

160(V)

集电极允许电流ICM

16(A)

集电极耗散功率PCM

125(W)

截止频率fT

1.0(MHz)

结构

平面型

封装形式

TO-3PN

封装材料

塑料封装