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iscSilicon NPN Power Transistors
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 100V(Min)- MJE4340
= 120V(Min)- MJE4341
= 140V(Min)- MJE4342
= 160V(Min)- MJE4343
·Low Saturation Voltage
·Complement to Type MJE4350/4351/4352/4353
APPLICATIONS
·Designed for use in high power audio amplifier applications
and high voltage switching regulator circuits.
SYMBOL | PARAMETER | VALUE | UNIT | |
VCBO | Collector- Base Voltage | MJE4340 | 100 | V |
MJE4341 | 120 | |||
MJE4342 | 140 | |||
MJE4343 | 160 | |||
VCEO | Collector-Emitter Voltage | MJE4340 | 100 | V |
MJE4341 | 120 | |||
MJE4342 | 140 | |||
MJE4343 | 160 | |||
VEBO | Emitter-Base Voltage | 7 | V | |
IC | Collector Current-Continuous | 16 | A | |
ICM | Collector Current-Peak | 20 | A | |
IB | Base Current-Continuous | 5 | A | |
PC | Collector Power Dissipation @ TC=25℃ | 125 | W | |
TJ | JunctionTemperature | 150 | ℃ | |
Tstg | StorageTemperature Range | -65~150 | ℃ |
是
iscsemi
MJE4343
放大
硅(Si)
NPN型
160(V)
16(A)
125(W)
1.0(MHz)
平面型
TO-3PN
塑料封装