无锡固电ISC供应达林顿功率晶体管T30F

SYMBOL

PARAMETER

VALUE

UNIT

V_CBO

Collector-Base Voltage                      

500

V

V_CEO

Collector-Emitter Voltage                         

300

V

V_EBO

Emitter-Base Voltage

5

V

I_C

Collector Current-Continuous

10

A

I_B

Base Current-Continuous

1

A

P_C

Collector Power Dissipation

@ T_C=25℃

80

W

T_J

JunctionTemperature

150

℃

T_stg

StorageTemperature Range

-55~150

℃

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V_(BR)CEO

Collector-Emitter Breakdown Voltage

I_C= 30mA; I_B= 0

300

V

V_(BR)CBO

Collector-BaseBreakdownVoltage                      

I_C= 1mA; I_E= 0

500

V

V_CE(sat)

Collector-Emitter Saturation Voltage

I_C= 6A; I_B= 6mA

2.5

V

V_BE(sat)

Base-Emitter Saturation Voltage

I_C= 6A; I_B= 6mA

3.0

V

I_CBO

Collector Cutoff Current

V_CB= 500V; I_E= 0

100

μA

I_EBO

Emitter Cutoff Current

V_EB= 5V; I_C= 0

100

μA

h_FE

DC Current Gain

I_C= 3A; V_CE= 2V

1000