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iscSilicon NPN Power Transistors
DESCRIPTION
·Low Saturation Voltage
·Good Linearity of hFE
·Fast Switching Speeds
·Complement to Type D45C3
APPLICATIONS
·Designed for various specific and general purpose application
such as: output and driver stages of amplifiers operating at
frequencies from DC to greater than 1.0MHz series, shunt
and switching regulators; low and high frequency inverters/
converters and many others.
SYMBOL | PARAMETER | VALUE | UNIT |
VCES | Collector-Emitter Voltage | 40 | V |
VCEO | Collector-Emitter Voltage | 30 | V |
VEBO | Emitter-Base Voltage | 5 | V |
IC | Collector Current-Continuous | 4 | A |
ICM | Collector Current-Peak | 6 | A |
IB | Base Current-Continuous | 1 | A |
PC | Collector Power Dissipation @TC=25℃ | 30 | W |
Tj | Junction Temperature | 150 | ℃ |
Tstg | StorageTemperature Range | -55~150 | ℃ |
是
iscsemi
D44C3
放大
硅(Si)
NPN型
30(V)
4(A)
30(W)
50(MHz)
平面型
直插型
塑料封装